TREVISOLLI, R.Rodrido DoriaMichelly De SouzaMarcelo Antonio Pavanello2022-01-122022-01-122015-11-20TREVISOLLI, R.; DORIA R. DE SOUZA, M. PAVANELLO, M. A. Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Nov. 2015.https://repositorio.fei.edu.br/handle/FEI/3947This work presents, for the first time, an analytical and explicit model for the intrinsic transcapacitances and transconductances of triple-gate Junctionless Nanowire Transistors. The expressions are derived from a surface potential-based charge model and are validated with 3D TCAD numerical simulations.Acesso RestritoArtigo de evento10.1109/S3S.2015.7333522Junctionless Nanowire TransistorsModelingTranscapacitances