Advantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applications

Michelly De SouzaMarcelo Antonio PavanelloFLANDRE, D.2022-01-122022-01-122015-11-20DE SOUZA, M. PAVANELLO, M. A.; FLANDRE, D. Advantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applications. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Nov. 2015.https://repositorio.fei.edu.br/handle/FEI/3945This paper presents the analog characteristics of asymmetric self-cascode SOI nMOSFETs biased in subthreshold region aiming at low power low voltage analog applications. It is shown for the first time that the advantages of this structure in comparison to single transistors and symmetric self-cascode is sustained below threshold and improves as device moves to subthreshold.Acesso RestritoAdvantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applicationsArtigo de evento10.1109/S3S.2015.7333488Asymmetric structureLow-powerSelf-cascodeSOI MOSFETSubthreshold