TREVISOLI, R. D.Rodrido DoriaMichelly De SouzaMarcelo Antonio Pavanello2022-01-122022-01-122012-09-02TREVISOLI, R. D.; DORIA, R; DE SOUZA, M.; PAVANELLO, M. A. Accounting for short channel effects in the drain current modeling of junctionless nanowire transistors. ECS Transactions, v. 49, n. 1, p. 207-214. 2012.1938-6737https://repositorio.fei.edu.br/handle/FEI/4152Junctionless nanowire transistors have a constant doping profile from source to drain, providing a great scalability without the need of rigorously controlled doping gradients and activation techniques. Therefore, these devices are considered as promising for decananometer era. This work proposes an analytical model for the drain current in junctionless nanowire transistor (JNT) accounting for short channel effects and temperature dependence. Tridimensional numerical simulations of p-type devices have been performed to validate the model. Experimental data of n-type devices have also been used. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/04901.0207ecst