PERUZZI, V. V.RENAUX, C.FLANDRE, D.Salvador Gimenez2022-01-122022-01-122016-09-03PERUZZI, V. V. ; RENAUX, C. ; FLANDRE, D. ; GIMENEZ, S. Boosting the MOSFETs matching by using diamond layout style. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, Sept. 2016.https://repositorio.fei.edu.br/handle/FEI/3879© 2016 IEEE.This paper performs an experimental comparative study of the Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors (MOSFETs) matching, which are implemented with the hexagonal gate geometry (Diamond) and classical rectangular one. Some of the main analog parameters of 360 devices are investigated. The results demonstrate that the Diamond SOI MOSFETs with α angles equal to 53.1° and 90° are capable of boosting in more than 20% the devices matching in comparison to those observed in the typical rectangular SOI MOSFETs, regarding the same gate area and bias conditions. Therefore, the Diamond layout style is an alternative technique to reduce the MOSFETs' mismatching regarding the analog SOI CMOS ICs applications.Acesso RestritoArtigo de evento10.1109/SBMicro.2016.7731334Devices MatchingSOI nMOSFET and analog SOI CMOS ICs