FONTE, E. T.TREVISOLI, R.Rodrido Doria2022-01-122022-01-122019-08-30FONTE, E. T.; TREVISOLI, R.; DORIA, R.Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, Aug. 2019.https://repositorio.fei.edu.br/handle/FEI/3717© 2019 IEEE.A study of Junctionless Nanowire Transistors (JNTs) is presented in this work, with emphasis on verifying the applicability of the charge pumping method for the analysis of interface traps. To the best of our knowledge, this is the first work to use this method in JNTs. The first step is the analysis of the performance using numerical simulations. It is stated that a transient current is observed in the devices with the charge pumping method application and increases with the trap density. Simulated and experimental data of Junctionless Nanowire Transistors show how this method can be useful and its applicability to verify the JNTs interface quality.Acesso RestritoArtigo de evento10.1109/SBMicro.2019.8919464Charge pumpingInterface trapsJunctionless nanowire transistorsSOI Technology