AGOPIAN, P. G. D.MARTINO, J. A.ROOYACKERS, R.VANDOOREN, A.SIMON, E.CLAEYS, C.2022-01-122022-01-122013AGOPIAN, P. G. D.; MARTINO, J. A.; ROOYACKERS, R.; VANDOOREN, A.; SIMON, E.; CLAEYS, C. Experimental comparison between pTFET and pFinFET under analog operation. ECS Transactions, v. 53, n. 5, p. 155-160, Mayo, 2013.1938-5862https://repositorio.fei.edu.br/handle/FEI/4060In this work, the analog performance of Tunnel FET and FinFET, which have a different principle of operation, is evaluated based on a comparison between them. This comparison is performed through the drain current behavior, the transconductance, the output conductance and the intrinsic voltage gain. Although the TFET devices present a smaller transconductance than the FinFET ones, the output behavior is strongly improved and results in a better performance of TFET devices when the focus is the intrinsic voltage gain. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/05305.0155ecst