BÔAS, A. C. V.ALBERTON, S. G.MEDINA, N. H.AGUIAR, V. A. P.MELO, M. A. A.Roberto SantosRenato GiacominiCAVALCANTE, T. C.VAZ, R. G.JUNIOR E, C. F. P.SEIXAS, L. E.FINCO, S.Marcilei Aparecida Guazzelli2022-06-012022-06-012021-01-05BÔAS, A. C. V.; ALBERTON, S. G.; MEDINA, N. H.; AGUIAR, V. A. P.; MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; CAVALCANTE, T. C.; VAZ, R. G.; JUNIOR E, C. F. P.; SEIXAS, L. E.; FINCO, S.; GUAZZELLI, M. A. Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET. Journal of Integrated Circuits and Systems, v. 16, n. 3, 2021.1872-0234https://repositorio.fei.edu.br/handle/FEI/4510© 2021, Brazilian Microelectronics Society. All rights reserved.—In this work, measurements were taken to investigate the robustness of a GaN HEMT to Total Ionizing Dose (TID) by a60gmmax values are dependable of the dose rate.DVTH values due to the TID, in this device are independent of the dose rate and the radiation source. However, the DCo Source. These results will be compared with a previous X-ray based work. Therefore, we will be, primarily, comparing both radiation sources. The robustness was investigated through IDxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on-and off-state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Manly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the.Acesso AbertoArtigo10.29292/jics.v16i3.56660CoGaNIII/V devicesradiationTIDX-ray