Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation

Rodrigo DoriaTREVISOLI, R. D.Michelly De SouzaCOLINGE, J.P.Marcelo Antonio Pavanello2022-01-122022-01-122011-10-06DORIA, R.; TREVISOLI, R. D.; DE SOUZA, M. Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation. Proceedings - IEEE International SOI Conference, Oct. 2011.https://repositorio.fei.edu.br/handle/FEI/4176This work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/f or 1/f 2 noises, depending on their operation region and the frequency. 1/f noise has been associated to carrier number fluctuations whereas 1/f 2 can be related to defects in the depletion layer. The W mask reduction degrades S Id at higher V GT (∼ 1 V) and present negligible influence on S Id at lower V GT (∼ 0.2 V). © 2011 IEEE.Acesso RestritoAnalysis of the low-frequency noise of junctionless nanowire transistors operating in saturationArtigo de evento10.1109/SOI.2011.6081688