Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET

PAIOLA, A. G.NICOLETT, A. S.MARTINO, J. A.2023-08-262023-08-262005-09-05PAIOLA, A. G.; NICOLETT, A. S.; MARTINO, J. A. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Proceedings - Electrochemical Society, v. PV 2005-08, p. 529-537, sept. 2005.https://repositorio.fei.edu.br/handle/FEI/5056This work analyzes the influence of the gate oxide tunneling current on the extraction of the silicon film and front oxide thickness on deep submicrometer fully depleted SOI nMOSFET devices. Numerical bidimensional simulations to support the analysis and experimental measurements were done using 0.13 μm SOI CMOS technology.Acesso RestritoInfluence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFETArtigo de evento