Salvador GimenezFERREIRA, R. M. G.Joao Antonio Martino2023-08-262023-08-262006-09-01GIMENEZ, S.; FERREIRA, R. M. G.; MARTINO. J. A. Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology. ECS Transactions, v. 4, n. 1, p. 309-318, sept. 2006.1938-6737https://repositorio.fei.edu.br/handle/FEI/5037This paper studies the Early voltage behavior in circular gate partially-depleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate and drain voltages. Drain current comparisons with rectangular gate partially-depleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three-dimensional simulations are used to qualify the results. © 2006 The Electrochemical Society.Acesso RestritoArtigo de evento