Open Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85090604382&origin=inward. Acesso em 30 maio 2022.BRAGA DE LIMA, M. P.CAMILO, L. M.PEIXOTO, M. A. P.CORREIA, M. M.Salvador Gimenez2022-01-122022-01-122020-01-05BRAGA DE LIMA, M. P.; CAMILO, L. M. ; PEIXOTO, M. A. P.; CORREIA, M. M.; GIMENEZ, S. Zero temperature coefficient behavior for ellipsoidal mosfet. Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, Jan. 2020.1872-0234https://repositorio.fei.edu.br/handle/FEI/3677© 2020, Brazilian Microelectronics Society. All rights reserved.The zero temperature coefficient (ZTC) is investi-gated by three-dimensional numerical simulations in the Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectan-gular gate geometries (CM), considering the same channel widths (W), gate areas (AG) and bias condition (BC). In this work an improved simple model which predicts the ZTC point taking into account only the mobility degradation factor (c) and threshold voltage (Vth) parameters as function of temperature is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations of the threshold voltage and the mobility degradation factor. Alt-hough simple, the model predictions present a good agreement with the numerical simulations results.Acesso AbertoArtigo10.29292/jics.v15i2.166Ellipsoidal layout styleMobility degradationSimple modelZero temperature coefficient