ALBERTON, S. G.AGUIAR, V. A. P.MEDINA, N. H.ADDED, N.MACCHIONE, E. L. A.MENEGASSO, R.CESARIO. G. J.SANTOS, H. C.SCARDUELLI, V. B.ALCANTARA-NUNEZ, J. A.Marcilei Aparecida GuazzelliRoberto SantosFLECHAS, D.2022-10-012022-10-012022-10-05ALBERTON, S. G. ALBERTON, S. G.; AGUIAR, V. A. P.; MEDINA, N. H.; ADDED, N.; MACCHIONE, E. L. A.; MENEGASSO, R.; CESARIO. G. J.;SANTOS, H. C.; SCARDUELLI, V. B.; ALCANTARA-NUNEZ, J. A.; GUAZZELLI, M. A.; SANTOS, R.; FLECHAS, D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, Oct. 2022.0026-2714https://repositorio.fei.edu.br/handle/FEI/4589© 2022 Elsevier LtdThe heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self-consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism.Acesso RestritoArtigo10.1016/j.microrel.2022.114784Charge depositionHeavy-ionPower MOSFETSingle-event burnoutWorst-case