Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative commons (CC BY 4.0). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85145608255&origin=inward. Acesso em: 08 fev. 2023.ALVES, C. R.Michelly De Souza2023-02-012023-02-012023-01-04ALVES, C. R.; DE SOUZA, M. Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs.1572-8137https://repositorio.fei.edu.br/handle/FEI/4687© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This work presents a comparative study of the transcapacitances of an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. This analysis was done by means of two-dimensional numerical simulations. Simulated results show the influence of others transcapacitances on the gate-to-gate capacitance for the ASC SOI device and the GC SOI device.Acesso RestritoArtigo10.1007/s10825-022-01998-3Analog performanceAsymmetricCapacitanceMOSFETSelf-cascodeSilicon-on-insulator