Cirne K.Silveira M.A.G.Santos R.B.B.Gimenez S.P.Barbosa M.D.L.Tabacniks M.H.Added N.Medina N.H.De Melo W.R.Seixas Jr. L.E.De Lima J.A.2019-08-192019-08-192012Cirne, K.; Seixas, L.E.; de Lima, J.A.; Silveira, M.A.G.; Santos, R.B.B.; Gimenez, S.P.; Barbosa, M.D.L.; Tabacniks, M.H.; ADDED, N.; Medina, N.H.; De Melo, W.R.. Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 80-82, 2012.0168-583Xhttps://repositorio.fei.edu.br/handle/FEI/1448The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.Acesso RestritoArtigo de evento10.1016/j.nimb.2011.07.044Circular-Gate MOSFETExternal proton beamIntegrated circuitsRadiation effectsRadiation hardeningRectangular-Gate MOSFETTotal Ionizing Dose (TID)