Cerdeira A.Aleman M.A.Pavanello M.A.Martino J.A.Vancaillie L.Flandre D.2019-08-192019-08-192005CERDEIRA, Antonio; ALEMÁN, Miguel; PAVANELLO, Marcelo A.; MARTINO, João Antonio; VANCAILLIE, Laurent; FLANDRE, Denis. Advantages of the Graded-Channel SOI FD MOSFET for Application as a Quasi-Linear Resistor. I.E.E.E. Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005.0018-9383https://repositorio.fei.edu.br/handle/FEI/1059In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications as on-resistance and nonlinear harmonic distortion, is supported by both measurements and simulations of conventional and graded-channel (GC) fully depleted silicon-on-insultor (SOI) MOSFETs. The quasi-linear current-voltage characteristics of GC transistors show a decrease of the on-resistance as the length of the low doped region in the channel is increased, as well as an improvement in the third-order harmonic distortion (HD3), when compared with conventional transistors. A method for full comparison between conventional and GC SOI MOSFETs is presented, considering HD3 evolution with on-resistance tuning under low voltage of operation. Results demonstrate the significant advantages provided by the asymmetrical long channel transistors. © 2005 IEEE.Acesso RestritoArtigo10.1109/TED.2005.846327Graded-channel MOSFETHarmonic distortionIntegral function method (IFM)MOSFET-C filtersQuasi-linear resistor