IOP Publishing "Este é um artigo publicado em acesso aberto sob uma licença" IOP. Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84919724280&origin=inward. Acesso em: 04 jun. 2024.TEIXEIRA, F. F.BORDALLO, C. C. M.Marcilei Aparecida GuazzelliAGOPIAN, P. G. D.MARTINO, J. A.SIMOEN, E.CLAEYS, C.2023-08-262023-08-262014-05-05TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014.1872-0234https://repositorio.fei.edu.br/handle/FEI/4931© 2014, Journal of Integrated Circuits and Systems. All rights reserved.In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.Acesso RestritoArtigoMultiple-Gate MOSFETs (MuGFETs)Parasitic back conductionX-ray radiation