Michelly De SouzaMarcelo Antonio PavanelloFLANDRE, D.2022-01-122022-01-122017DE SOUZA, M.; PAVANELLO, M. A.; FLANDRE, D. Low power highly linear temperature sensor based on SOI lateral PIN diodes. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Oct. 2016.https://repositorio.fei.edu.br/handle/FEI/3852This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.Acesso RestritoArtigo de evento10.1109/S3S.2016.7804382Low PowerPIN DiodePTAT sensorSOITemperature Sensor