Analysis of silicon thickness reduction on analog parameters of GC GAA SOI transistors operating up to 300°C

SANTOS, C. D. G. DOSMarcelo Antonio PavanelloJoao Antonio Martino2023-08-262023-08-262006-09-01SANTOS, C. D. G. DOS; PAVANELLO, M. A.; MARTINO, J. A. Analysis of silicon thickness reduction on analog parameters of GC GAA SOI transistors operating up to 300°C. ECS Transactions, v. 4, n. 1, p. 283-291, sept. 2006.1938-6737https://repositorio.fei.edu.br/handle/FEI/5038This paper analyzes the impact of silicon film thickness reduction in some analog parameters of Gate-All-Around (GAA) transistors using the graded-channel (GC) architecture. The study was done at high temperatures (up to 300°C) through two-dimensional simulations. As the silicon film is reduced an improvement on the Early voltage was observed. However, for GC GAA devices this improvement is more pronounced at room temperature than at high temperatures. The output swing voltage (Vos) was also studied and it decreases while reducing the silicon thickness. Regarding the GC GAA the Vos is larger than conventional GAA in 50 nm thick transistors. © 2006 The Electrochemical Society.Acesso RestritoAnalysis of silicon thickness reduction on analog parameters of GC GAA SOI transistors operating up to 300°CArtigo de evento