DE SOUZA FINO, L. N.Marcilei Aparecida GuazzelliRENAUX, C.FLANDRE, D.Salvador Gimenez2022-01-122022-01-122014-09-05DE SOUZA FINO, L. N.; GUAZZELLI, M. A.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Boosting the radiation hardness and higher reestablishing pre-rad conditions by using OCTO layout style for MOSFETs. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Sept. 2014.https://repositorio.fei.edu.br/handle/FEI/4002This manuscript has the objective to perform an experimental comparative analysis of the total ionizing dose influence in the Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistor implemented with the octagonal gate shape (OCTO) and the standard one (rectangular gate shape) counterpart, after a X-ray radiation exposure. The back-gate bias technique is applied in these devices to reestablish the threshold voltage and subthreshold slope that were degraded by the ionizing radiation effects. Since the octagonal layout style maintains a better electrical performance after radiation, a smaller back-gate bias to recover the pre-rad operation is required in comparison to the conventional counterpart. This is mainly because the parasitic transistors in the bird's beak region are practically deactivated by the particular octagonal gate geometry.Acesso RestritoArtigo de evento10.1109/SBMicro.2014.6940133back-gate bias techniqueDEPAMBBREOctogonal layout for MOSFETTID effects