Gimenez S.P.Alati D.M.2019-08-192019-08-192015Gimenez, Salvador Pinillos; Alati, Daniel Manha. Electrical behavior of the diamond layout style for MOSFETs in X-rays ionizing radiation environments. Microelectronic Engineering, v. 148, n. 1, p. 85-90, 2015.0167-9317https://repositorio.fei.edu.br/handle/FEI/1309© 2015 Elsevier B.V. All rights reserved.This paper aims to describe some innovative layout styles, which are capable to boost the electrical performance and, in the same time, the Total Ionizing Dose (TID) tolerance of Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET), without burdening the current planar Complementary MOS (CMOS) Integrated Circuits (ICs) manufacturing processes. To illustrate the potential use of these new alternative devices in analog and digital CMOS ICs applications, this work focuses on the Diamond layout style for MOSFET that presents hexagonal gate geometry. The new effects associated to this innovative transistor structure and its modeling are presented and discussed in detail. Some experimental results are illustrated to evidence its use mainly in space and medical CMOS ICs applications.Acesso RestritoArtigo10.1016/j.mee.2015.09.001DEPAMBBREDiamond (hexagonal gate geometry)LCEPAMDLETotal ionizing dose (TID)X-rays radiation