Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!. Acesso em: 25 nov. 2021.VILAS BOAS, ALEXIS C.MELO, MARCO ANTONIO ASSIS DERoberto SantosRenato GiacominiMEDINA N. H.SEIXA, L. E.FINCO, S.PALOMO, F. R.ROMERO-MAESTRE, A.Marcilei Aparecida Guazzelli2021-11-252021-11-252021-01-05VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.0026-2714https://repositorio.fei.edu.br/handle/FEI/3477The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.Acesso RestritoTIDRadiation effectsGaNHEMTArtigo10.1016/j.microrel.2020.114000