Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative commons (CC BY 4.0). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85140230595&origin=inward. Acesso em 08 dez. 2022.BOAS, A. C.V.ALBERTON, S. G.DE MELO, M. A. A.Roberto SantosRenato GiacominiMEDINA, N. H.SEIXAS, L. E.FINCO, S.PALOMO, F. R.Marcilei Aparecida Guazzelli2022-11-012022-11-012022-11-09BOAS, A. C.V.; ALBERTON, S. G.; DE MELO, M. A. A.; SANTOS, R.; GIACOMONI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; GUAZZELLI, M. A. COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis. Journal of Physics: Conference Series, v. 2340, n. 1, nov. 2021.1742-6596https://repositorio.fei.edu.br/handle/FEI/4620© 2022 Institute of Physics Publishing. All rights reserved.Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.Acesso AbertoArtigo de evento10.1088/1742-6596/2340/1/012045