COSTA, F. J.Marcelo Antonio PavanelloTREVISOLI, R.Rodrigo Doria2022-01-122022-01-122017-08-28COSTA, F. J.; PAVANELO; TREVISOLI, R.; DORIA, R. Analysis of the substrate bias effect on the thermal properties of SOI UTBB transistors. In. SIMPÓSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS: CHIP ON THE SANDS, SBMICRO, 32., 2017, Fortaleza: SBMicro 2017 - 32º Simpósio de Tecnologia e Dispositivos Microeletrônicos: Chip on the Sands, co-localizado Simpósios: 30º SBCCI - Projeto de Circuitos e Sistemas, 2º INSCIT - Instrumentação Eletrônica, 7º WCAS - Casos de Design de IC e 17º SForum - Fórum de Estudantes de Graduação, 2017.https://repositorio.fei.edu.br/handle/FEI/3827This work presents an analysis of the thermal resistance of Ultra-Thin Body and Buried Oxide (UTBB) SOI (Silicon-on-Insulator) MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) under a selected set of back gate biases (Vsub), with and without considering the effect of the ground plane. It has been shown that the thermal resistance increases as the substrate bias is reduced. For negative Vsub, a thicker depletion depth is induced by the back gate, confining the overall current closer to the front gate and increasing its density. A thermal resistance reduction of about 8-9% can be obtained by simply increasing the back bias from -2V up to 2 V.Acesso RestritoArtigo de evento10.1109/SBMicro.2017.8112989Self-Heating EffectSOI TechnologyThermal ResistanceUTBUTBB