MOLTO, A.R.PAZ, B. C.Marcelo Antonio Pavanello2022-01-122022-01-122019-05-19MOLTO, A.R.; PAZ, B. C. Influence of fin width and back bias on the low-frequency noise of long channel SOI nanowires. Latin American Electron Devices Conference, LAEDC 2019, Mayo, 2019.https://repositorio.fei.edu.br/handle/FEI/3725This work studies the influence of fin width and back bias on the low-frequency noise of long channel fully depleted SOI nanowires. Devices with fin widths of 20nm, 45nm and 105nm were studied under different back bias (Vsub) conditions, varying Vsub from-40V to 40V. Nanowires operate in linear regime with gate voltage overdrive varying from OmV to 200mV. Results show low-frequency noise increase for both positive and negative back bias for long channel devices. For the input referred noise power spectral density as a function of Wfin,it was possible to observe a slight increase of SVG with Wfindecrease.Acesso RestritoArtigo de evento10.1109/LAED.2019.8714739Back biasFully depleted SOIlow-frequency noiseNanowire