MARTIN M. J.RENGEL R.GALEOTE J. M.Michelly De SouzaMarcelo Antonio Pavanello2022-01-122022-01-122011-02-11MARTIN M. J.; RENGEL R.; GALEOTE J. M.; DE SOUZA, M.; PAVANELLO, M. A. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs. Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011. Fev. 2011.https://repositorio.fei.edu.br/handle/FEI/4208In this paper a Monte Carlo investigation of Graded Channel (GC) Silicon-On-Insulator MOSFETs is presented. The influence of the length of the lightly-doped region of the channel (LLD) on the microscopic transport properties is exhaustively analyzed. Result show that increasing LLD provides an enhancement of the device performance in terms of drain current and transconductance. However, for LLD values larger than half of the channel the benefits are minimized from a microscopic point of view due to the increasing tendency of the device to behave as a lightly doped conventional transistor. This suggests the existence of an optimum L LD value to fully benefit from the improvements provided by GC doping techniques. © 2011 IEEE.Acesso RestritoArtigo de evento10.1109/SCED.2011.5744179Fully Depleted SOIGraded Channel MOSFETmicroscopic transportMonte Carlo simulation