Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs

MUCI, JuanLATORRE-REY, A. D.GARCIA-SANCHEZ, FranciscoLUGO-MUÑOZ, D.ORTIZ-CONDE, AdelmoHO, C. S.LIOU, J. J.PAVANELLO, Marcelo A.TREVISOLI, Renan Doria2019-08-192019-08-192010MUCI, Juan; LATORRE-REY, A. D.; GARCIA-SANCHEZ, Francisco; LUGO-MUÑOZ, D.; ORTIZ-CONDE, Adelmo; HO, C. S.; LIOU, J. J.; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria. Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 103-109, 2010.1807-1953https://repositorio.fei.edu.br/handle/FEI/1078Acesso RestritoExtraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETsArtigo