AGOPIAN, P. G. D.MARTINO, J. A.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122006-08-05AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectronics Journal, v. 37, n. 8, p. 681-685, Aug. 2006.0026-2692https://repositorio.fei.edu.br/handle/FEI/4348In this work, the influence of the twin-gate structure on the gate-induced floating body effects in thin gate oxide partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs is investigated through two-dimensional numerical simulations, which are validated by experimental results. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be shown, as well as the relation between the total resistance and the effective mobility degradation factor. It will be demonstrated that a similar reduction of the linear kink effect is obtained in a twin-gate structure and in a conventional SOI transistor with an external resistance in series. © 2006 Elsevier Ltd. All rights reserved.Acesso RestritoArtigo10.1016/j.mejo.2005.12.003Linear kink effectSeries resistanceSilicon-on-insulatorTunneling currentsTwin-gate structureUltra-thin gate oxides