PERUZZI, V. V.RENAUX, C.FLANDRE, D.Salvador Gimenez2022-01-122022-01-122012-09-02PERUZZI, V. V.; RENAUZ, C.; RENAUX, C.; FLANDRE, D. GIMEMEZ, S. Experimental validation of the drain current analytical model of the fully depleted diamond SOI nMOSFETs by using paired t-test statistical evaluation. ECS Transactions, v. 49, n. 1, p. 169-176, Sept. 2012.1938-6737https://repositorio.fei.edu.br/handle/FEI/4156The focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/04901.0169ecst