PERUZZI , VINICIUS VONOCRUZ, WILLIAMSILVA, GABRIEL AUGUSTO DASIMOEN, EDDYCLAEYS, CORSalvador Gimenez2021-12-212021-12-212020-08-10PERUZZI , V. V.; CRUZ, W.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for MOSFETs to boost the device matching in Ionizing radiation environments. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.1807-1953https://repositorio.fei.edu.br/handle/FEI/3494This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transis-tors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technol-ogy and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha () angle equal to 90 ̊ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.Acesso AbertoDiamond Layout StyleHardness-by-design techniqueMOSFETs matching, analog CMOS ICTotal Ion-izing DoseArtigo10.29292/jics.v15i2.185