Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures

NOVO, CARLABUHLER, RUDOLFBAPTISTA, JOAOGIACOMINI, RENATOAFZALIAN, ARYANFLANDRE, DENIS2019-08-192019-08-192017NOVO, CARLA; BUHLER, RUDOLF; BAPTISTA, JOAO; GIACOMINI, RENATO; AFZALIAN, ARYAN; FLANDRE, DENIS. Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v. 17, n. 6, p. 1641-1648, 2017.1558-1748https://repositorio.fei.edu.br/handle/FEI/1260Acesso RestritoQuantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High TemperaturesArtigo10.1109/jsen.2017.2647848