Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative commons (CC BY 4.0). Fonte: https://www.scielo.br/j/bjp/a/xWC4gTpprnjSRqVmR9f76SJ/?lang=en. Acesso em: 20 junho 2022.DA MATTA, J. A. S.GALVAO, R. M. O.RUCHKO, L.FANTINI, M. C. A.KIUOHARA, P. K.2022-01-122022-01-122003-03-05DA MATTA, J. A. S.; GALVAO, R. M. O.; RUCHKO, L.; FANTINI, M. C. A.; KIUOHARA, P. K. Description and characterization of a ECR plasma device developed for thin film deposition. Brazilian Journal of Physics, v. 33, n. 1, p. 123-127, March, 2003.0103-9733https://repositorio.fei.edu.br/handle/FEI/4380The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and electron temperature were measured by two types of Langmuir probes under different conditions of magnetic configuration and RF substrate polarization. For the investigated nitrogen plasmas, the electron temperature increases towards substrate holder and decreases with pressure. The magnetic configuration and plasma parameters required for successful growth of polycrystal aluminum nitride have been determined.Acesso AbertoArtigo10.1590/s0103-97332003000100011