MAGALHAES, R. A.; AGOPIAN, P. G. D.; GUAZZELLI, M. A.; GIACOMINI, R. Alpha radiation incidence angle influence on planar FDSOI nMOSFET. ECS Transactions, v. 39, n. 1, p. 85-89, 2011.AGOPIAN, P. G. D.Marcilei Aparecida GuazzelliRenato Giacomini2022-01-122022-01-1220111938-5862https://repositorio.fei.edu.br/handle/FEI/4187This work addresses the dependence of the incidence angle of alpha radiation on nMOSFET FDSOI transistor. The incidence angle ranged from -90 to 90 degrees in the two main symmetry planes of the device. The transitory effects were analyzed through three dimensional numerical simulations. The results showed considerable directivity to single event effects susceptibility. The generalized directivity can be used in the shielding engineering of electronic equipment subjected to isotropic radiation environments. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.3615180