Michelly De SouzaRodrido DoriaTREVISOLI, R.D.Marcelo Antonio Pavanello2022-01-122022-01-122015-03-18DE SOUZA, M. DORIA, R.; TREVISOLI, R.D.; PAVANELLO, M. A. Ultra-low-power diodes using junctionless nanowire transistors. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, p. 313-316, March, 2015.https://repositorio.fei.edu.br/handle/FEI/3966In this work, the performance of Ultra-Low-Power (ULP) Diodes implemented with Junctionless Nanowire Transistors (JNTs) is presented for the first time. Experimental data of ULP Diodes formed by Junctionless Nanowire CMOS Transistors show that nanowire width, length and doping concentration play an important role in the reverse current of the diodes, affecting the on-off current ratio.Acesso RestritoArtigo de evento10.1109/ULIS.2015.7063836junctionless nanowire transistorsultra-low-power diode