MOLTO, A. R.Rodrigo DoriaMichelly De SouzaFLANDRE, D.Marcelo Antonio Pavanello2022-01-122022-01-122016-08-29MOLTO, A. R.; DORIA, R.; DE SOUZA, M.; FLANDRE, D; PAVANELLO, M. A. Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.https://repositorio.fei.edu.br/handle/FEI/3876This work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear regime at VDS=50mV. It is shown that the origin of the noise changes from carrier number fluctuations to mobility fluctuations as the temperature is increased. Additionally, the generation and recombination noise plays a significant role on the overall noise with the temperature rise.Acesso RestritoArtigo de evento10.1109/SBMicro.2016.7731319GC SOILow Frequency Noise (LFN)SubmicronTemperature