Renato GiacominiMARINO, J. A.2023-08-262023-08-262004-09-07GIACOMINI, R.; MARINO, J. A. An improved model for the triangular SOI misalignment test structure. Proceedings - Electrochemical Society, v. 3, p. 57-62, sept. 2023.https://repositorio.fei.edu.br/handle/FEI/5067The triangular misalignment test structure is an arrangement of MOS transistors to calculate the poly and source/drain diffusion misalignment as a function of drain current differences. Although these structures have non-rectangular shapes, which may be detrimental for the design, the advantage of measuring currents instead of voltage differences make them very useful. This work presents a new analytic misalignment error model for thin-film, fully depleted SOI technology, using non rectangular devices. Three-dimensional numerical simulation is used as a reference for models comparison and verification. These simulation results show that the proposed analytical model presents an improved performance compared to those available in the literature.Acesso RestritoArtigo de evento