DE LIMA, J. A.Marcilei Aparecida GuazzelliCIRNE, K. H.Roberto SantosMEDINA, N. H.2022-01-122022-01-122011-09-23DE LIMA, J. A.; GUAZZELLI, M. A.; CIRNE, K. H.; SANTOS, R. B. B.; MEDINA, N. H. X-ray radiation effects in overlapping circular-gate MOSFET's. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. p. 88-91, Sept. 2011.https://repositorio.fei.edu.br/handle/FEI/4181IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process. © 2011 IEEE.Acesso RestritoArtigo de evento10.1109/RADECS.2011.6131374electronic devicesleakage currentMOSFETradiation effectsTotal Ionizing Dose (TID)X-ray