PAZ, B. C.Marcelo Antonio PavanelloCASSE, M.BARRAUD, S.REIMBOLD, G.VINET, M.FAYNOT, O.2022-01-122022-01-122017-06-29PAZ, B. C.; PAVANELLO, M. A.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O. Performance and transport analysis of vertically stacked p-FET SOI nanowires. Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, p. 79-82, jun. 2017.https://repositorio.fei.edu.br/handle/FEI/3839This work presents the performance and transport characteristics of vertically stacked p-MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. Electrical characterization is performed for NWs with [110] and [100] channel orientations, as a function of both fin width (WFIN) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15nm gate length. Improved effective mobility is obtained for [110]-oriented NWs due to higher sidewall mobility contribution.Acesso RestritoArtigo de evento10.1109/ULIS.2017.7962606channel orientationelectrical characterizationperformanceSOI MOSFETtransportvertically stacked nanowire