Browsing by Author DORIA, R. T.
Showing results 1 to 5 of 5
| Issue Date | Title | Author(s) |
| 2017 | A New Method for Series Resistance Extraction of Nanometer MOSFETs | TREVISOLI, R.; PAVANELLO, M. A.; DORIA, R. T.; DE SOUZA, M.; BARRAUD, S.; VINET, M.; CASSE, M.; REIMBOLD, G.; FAYNOT, O.; GHIBAUDO, G. |
| 26-May-2020 | Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors | COSTA, F. J.; DORIA, R. T.; Rodrigo Trevisoli Doria |
| 2012 | Surface Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors | TREVISOLI, R D; DORIA, R. T.; DE SOUZA, Michelly; DAS, Samaresh; FERAIN, I.; PAVANELLO, Marcelo A. |
| 31-Jul-2020 | The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors | GRAZIANO JUNIOR, N.; TREVISOLI, R.; DORIA, R. T. |
| 31-Jul-2020 | UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level | COSTA, F. J.; DORIA, R. T.; Rodrigo Trevisoli Doria |
