Browsing by Author GIACOMINI, R.
Showing results 1 to 7 of 7
| Issue Date | Title | Author(s) |
| 2015 | An accurate closed-expression model for FinFETs parasitic resistance | NASCIMENTO, A. S.;PEREIRA, A. S. N.; GIACOMINI, R. |
| 2017 | An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models | PEREIRA, A. S. N.; STREEL, G.; PLANES, N.; HAOND, M.; GIACOMINI, R.; FLANDRE, D.; KILCHYTSKA, V. |
| 2013 | Brazilian facilities to study radiation effects in electronic devices | MEDINA, N. H.; Santos, R. B. B.; SEIXAS, L. E.; TABACNIKS, M. H.; SILVEIRA, M. A. G.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; GIACOMINI, R.; MACCHIONE, E. L. A.; DE MELO, M. A. A.; OLIVEIRA, J. A. |
| 2016 | Innovative approach for electrical characterisation of pseudo-resistors | BENKO, P.L.; GALETI, M.; PEREIRA, C.F.; LUCCHI, J.C.; GIACOMINI, R. |
| 2013 | Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation | NOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D. |
| 2012 | A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor | PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R. |
| 2008 | Trapezoidal Cross-Sectional Influence on FinFET Threshold Voltage and Corner Effects | Giacomini, Renato; Martino, Joa?o Antonio; GIACOMINI, R. |
