Browsing by Author Giacomini R.

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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
2015A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detectorSilveira M.A.G.; Melo M.A.A.; Aguiar V.A.P.; Rallo A.; Santos R.B.B.; Medina N.H.; Added N.; Seixas L.E.; Leite F.G.; Cunha F.G.; Cirne K.H.; Giacomini R.; de OLIVEIRA J.A.
2005A simple current model for edgeless SOI nMOSFET and a 3-D analysisGiacomini R.; Martino J.A.
2015An accurate closed-expression model for FinFETs parasitic resistancePereira A.S.N.; Giacomini R.
2017An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical modelsPereira A.S.N.; de Streel G.; Planes N.; Haond M.; Giacomini R.; Flandre D.; Kilchytska V.
2014Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperaturesNovo C.; Giacomini R.; Doria R.; Afzalian A.; Flandre D.
2006Modeling silicon on insulator MOS transistors with nonrectangular-gate layoutsGiacomini R.; Martino J.A.
2013Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variationNovo C.; Giacomini R.; Afzalian A.; Flandre D.
2008Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effectsGiacomini R.; Martino J.A.
2009Trapezoidal SOI FinFET analog parameters' dependence on cross-section shapeBuhler R.T.; Giacomini R.; Pavanello M.A.; Martino J.A.
Showing results 1 to 9 of 9