Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1164
Title: Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Authors: Rodrigues, M.
GALETI, M.
MARTINO, João Antônio
COLLAERT, N.
SIMOEN, E.
CLAEYS, C.
Issue Date: 2011
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: Rodrigues, M.; GALETI, M.; MARTINO, João Antônio; COLLAERT, N.; SIMOEN, E.; CLAEYS, C.. Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation. Solid-State Electronics, v. 62, n. 1, p. 146-151, 2011.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2011.04.002
URI: https://repositorio.fei.edu.br/handle/FEI/1164
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