Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1296
Title: TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
Authors: BUHLER, RUDOLF THEODERICH
SIMOEN, EDDY
MARTINO, JOAO ANTONIO
CLAEYS, COR
ENEMAN, GEERT
FAVIA, PAOLA
WITTERS, LIESBETH JOHANNA
VINCENT, BENJAMIN
HIKAVYY, ANDRIY
LOO, ROGER
BENDER, HUGO
COLLAERT, NADINE
Issue Date: 2015
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Citation: BUHLER, RUDOLF THEODERICH; SIMOEN, EDDY; MARTINO, JOAO ANTONIO; CLAEYS, COR; ENEMAN, GEERT; FAVIA, PAOLA; WITTERS, LIESBETH JOHANNA; VINCENT, BENJAMIN; HIKAVYY, ANDRIY; LOO, ROGER; BENDER, HUGO; COLLAERT, NADINE. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs. IEEE Transactions on Electron Devices, v. 62, n. 4, p. 1-1, 2015.
Access Type: Acesso Aberto
DOI: 10.1109/ted.2015.2397441
URI: https://repositorio.fei.edu.br/handle/FEI/1296
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