Impact of the series resistance in the I-V characteristics of junctionless nanowire transistors and its dependence on the temperature
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2012-01-05
Autores
Rodrigo Doria
TREVISOLI, R. D.
Michelly De Souza
Marcelo Antonio Pavanello
TREVISOLI, R. D.
Michelly De Souza
Marcelo Antonio Pavanello
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Journal of Integrated Circuits and Systems
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DORIA, R.; TREVISOLI, R. D.; DE SOUZA, M.; PAVANELLO, M. A. Impact of the series resistance in the I-V characteristics of junctionless nanowire transistors and its dependence on the temperature. Journal of Integrated Circuits and Systems, v. 7, n. 1, p. 121-129, 2012.
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The effect of the source/drain parasitic resistance (R S) on the I-V characteristics of Junctionless Nanowire Transistors (JNTs) has been evaluated through experimental and simulated data. The impact of several parameters such as the temperature, the fin width, the total doping concentration, the source/drain length and the source/drain doping concentration on R S has been addressed. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices, showing opposite behavior with the temperature variation in IM triple transistors and JNTs. In the latter, a reduction on R S is noted with the temperature increase, which is related to the incomplete ionization. This effect inhibits the presence of a Zero Temperature Coefficient (ZTC) operation bias in the Junctionless devices.