Effect of high temperature on analog parameters of Asymmetric Self-Cascode SOI nMOSFETs

dc.contributor.authorD'OLIVEIRA, L. M.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:00:25Z
dc.date.available2022-01-12T22:00:25Z
dc.date.issued2014-10-29
dc.description.abstractThis paper presents an analysis on the high temperature operation of Silicon-on-Insulator (SOI) nMOSFETs in Asymmetric Self-Cascode (A-SC) configuration. For this analysis, experimental results in the range of 300K to 500K of A-SC structures with different channel lengths for both the drain side transistor (MD) and source side transistor (MS) are used. The effect of varying channel length under high temperatures on the A-SC association is evaluated using as figure of merit important analog parameters, such as the intrinsic voltage gain and transconductance over drain current ratio.
dc.identifier.citationD'OLIVEIRA, L. M.; FLANDRE, D.; PAVANELLO, M. A.; DE SOUZA, M. Effect of high temperature on analog parameters of Asymmetric Self-Cascode SOI nMOSFETs. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct. 2014.
dc.identifier.doi10.1109/SBMicro.2014.6940135
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3998
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog parameters
dc.subject.otherlanguageAsymmetric self-cascode
dc.subject.otherlanguageHigh temperatures
dc.subject.otherlanguageSOI nMOSFET
dc.titleEffect of high temperature on analog parameters of Asymmetric Self-Cascode SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84912133950
fei.scopus.subjectAnalog parameters
fei.scopus.subjectChannel length
fei.scopus.subjectFigure of merits
fei.scopus.subjectHigh temperature
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectNMOSFET
fei.scopus.subjectSelf-cascode
fei.scopus.subjectSilicon-on- insulators (SOI)
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912133950&origin=inward
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