Departamento de Física

URI Permanente desta comunidade

https://repositorio.fei.edu.br/handle/FEI/785

Navegar

Navegando Departamento de Física por Autor "AGUIAR, V. A. P."

Agora exibindo 1 - 2 de 2
  • Imagem de Miniatura
    Artigo de evento
    A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices
    (2019-08-05) ZAHN, G. S.; GENEZINI, F. A; MORALLES, M.; SIQUEIRA, P. T. D.; MEDINA, N. H.; AGUIAR, V. A. P.; MACCHIONE, E. L. A.; ADDED, N.; Marcilei Aparecida Guazzelli
    © Published under licence by IOP Publishing Ltd.In this work, we present a facility to study errors in digital devices exposed to thermal neutrons from a beam hole in the IEA-R1 nuclear reactor, as well as the long-lived isotopes produced in the irradiation of digital electronic devices under a slow neutron field. Preliminary results obtained with the analysis of a 28nm SRAM-based Xilinx Zynq-7000 FPGA are presented.
  • Nenhuma Miniatura disponível
    Artigo de evento
    Radiation effect mechanisms in electronic devices
    (2013-12-01) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.
    © Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.