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Autor: search.filters.author.D'OLIVEIRA, L. M.Assunto: search.filters.subject.Asymmetric self-cascode

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    Effect of high temperature on analog parameters of Asymmetric Self-Cascode SOI nMOSFETs
    (2014-10-29) D'OLIVEIRA, L. M.; FLANDRE, D.; Marcelo Antonio Pavanello; Michelly De Souza
    This paper presents an analysis on the high temperature operation of Silicon-on-Insulator (SOI) nMOSFETs in Asymmetric Self-Cascode (A-SC) configuration. For this analysis, experimental results in the range of 300K to 500K of A-SC structures with different channel lengths for both the drain side transistor (MD) and source side transistor (MS) are used. The effect of varying channel length under high temperatures on the A-SC association is evaluated using as figure of merit important analog parameters, such as the intrinsic voltage gain and transconductance over drain current ratio.