Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts(2006) Giacomini R.; Martino J.A.This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal parts and on an accurate but simple model of the trapezoidal layout transistor. Analytical expressions relating geometrical parameters and terminal current and voltages are presented for several shapes, such as L, U, T, and S, and other well-known devices such as the edgeless transistor and the asymmetric trapezoidal gate transistor. The proposed closed-form analytical expressions show good agreement with measured data and three-dimensional simulation results. © 2006 The Electrochemical Society. All rights reserved.
- Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects(2008) Giacomini R.; Martino J.A.Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have inclined surfaces, which results in trapezoidal cross sections instead of rectangular sections, as expected. This geometric alteration results in some device issues, like carrier profile, threshold voltage, and corner effects. This work analyzes these consequences based on three-dimensional numeric simulation of several dual-gate and triple-gate FinFETs. The simulation results show that the threshold voltage depends on the sidewall inclination angle and that this dependence varies according to the body doping level. The corner effects also depend on the inclination angle and doping level. © 2008 The Electrochemical Society.