Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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Filtros

2021 - 20232

Configurações

Periódico: search.filters.ispartof.IEEE Journal of the Electron Devices SocietyAssunto: search.filters.subject.SOI

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
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    Artigo 5 Citação(ões) na Scopus
    High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs
    (2023-01-05) Michelly De Souza; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; Pavanello M. A.
    AuthorIn this work, an experimental evaluation of Gate-Induce Drain Leakage (GIDL) current is presented for nanowire and nanosheet-based SOI transistors. The effects of fin width and temperature increase are studied. Obtained results indicate that the increase in device width makes the GIDL current more sensitive to temperature increase. Three-dimensional numerical simulations have shown that despite the reverse junction leakage increase with temperature, leakage current in nanosheet and nanowire transistors is composed predominantly of GIDL current. The change in valence and conduction bands caused by temperature increase favors the band-to-band tunneling, which is responsible for the worsening of GIDL at high temperatures.
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    Artigo 5 Citação(ões) na Scopus
    Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures
    (2021-01-04) RIBEIRO, THALES AUGUSTO; BARRAUD, SYLVAIN; Marcelo Antonio Pavanello
    This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices.