Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level(2020-07-31) COSTA, F. J.; DORIA, R. T.; Rodrigo Trevisoli DoriaThe main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical simulations, validated with experimental data from the literature. In this analysis, it could be observed that devices located on the channel length direction provoke a reduced thermal coupling and devices with their drain region next to each other suffer of an increased thermal coupling due to the lumped thermal energy. It also could be observed a degradation in some electrical parameters and in the thermal properties of a device under the influence of surrounded devices biased.
- Analysis of Mobility in Graded-Channel SOI Transistors aiming at Circuit Simulation(2020-07-31) SILVA, LUCAS MOTA BARBOSA DA; PAZ, BRUNA CARDOSO; Michelly De SouzaThis work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors us-ing an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-di-mensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjust-ing its parameters. This approach presents a percentage error smaller than 7.91% for low VDS.