Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level(2020-07-31) COSTA, F. J.; DORIA, R. T.; Rodrigo Trevisoli DoriaThe main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical simulations, validated with experimental data from the literature. In this analysis, it could be observed that devices located on the channel length direction provoke a reduced thermal coupling and devices with their drain region next to each other suffer of an increased thermal coupling due to the lumped thermal energy. It also could be observed a degradation in some electrical parameters and in the thermal properties of a device under the influence of surrounded devices biased.
- Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors(2020-05-26) COSTA, F. J.; DORIA, R. T.; Rodrigo Trevisoli DoriaThe main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to experimental data. Different ground plane (GP) arrangements have been considered in order to enhance the analysis. It has been shown that the substrate effect is strongly influenced by the reduction of the back gate bias and, that the capacitive coupling of the structure presents a different behavior with respect of each kind of GP configuration as the back gate bias is varied. Finally, it has been shown that the GP below the source and drain regions contributes significantly to the overall capacitive coupling of the transistors.